IPB80N06S4-07 数据手册
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技术规格
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: Infineon Technologies IPB80N06S4-07
- Power Dissipation (Pd): 79W
- Drain Source Voltage (Vdss): 60V
- Continuous Drain Current (Id): 80A
- Gate Threshold Voltage (Vgs(th)@Id): 4V@40uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 7.4mΩ@10V,80A
- Package: TO-263
- Manufacturer: Infineon Technologies
